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Teilenummer | P2206BTF |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
Logo | ||
Gesamt 8 Seiten P2206BTF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 22.5mΩ @VGS = 10V
ID
28A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
28
18
100
Avalanche Current
IAS 25
Avalanche Energy
L = 0.1mH
EAS
31
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
39
15
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.2
62.5
UNITS
°C / W
REV 1.0
1 2017/1/20
P2206BTF
N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:50pcs/Tube(2000pcs/Box)
REV 1.0
6 2017/1/20
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ P2206BTF Schematic.PDF ] |
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