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Teilenummer | P5002CDG |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten P5002CDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 50mΩ @VGS = 10V
ID
20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±16
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
20
13
60
Avalanche Current
IAS 6.8
Avalanche Energy
L=0.1mH
EAS
2.3
Power Dissipation
TC= 25 °C
TC= 100°C
PD
35
14
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
40
3.5
UNITS
°C / W
REV 1.0
1 2014/5/14
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ P5002CDG Schematic.PDF ] |
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