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PDF P45N02LDG Data sheet ( Hoja de datos )
| Número de pieza | P45N02LDG | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | UNIKC | |
| Logotipo |  |
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P45N02LDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 20mΩ @VGS = 10V
ID
32A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
32
20
110
Avalanche Current
IAS 23
Avalanche Energy
L = 0.1mH
EAS
27
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
35
14
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
2Limited by package, Duty cycle 1%.
SYMBOL
RqJC
RqJA
RqCS
TYPICAL
0.7
MAXIMUM
3.6
75
UNITS
°C / W
Ver 1.1
1 2013-3-13
1 page  
P45N02LDG
N-Channel Enhancement Mode MOSFET
Ver 1.1
5 2013-3-13
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet P45N02LDG.PDF ] | |
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