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P2003ED Schematic ( PDF Datasheet ) - UNIKC

Teilenummer P2003ED
Beschreibung P-Channel Enhancement Mode MOSFET
Hersteller UNIKC
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Gesamt 5 Seiten
P2003ED Datasheet, Funktion
P2003ED
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID
-36A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-36
-23
-100
Avalanche Current
Avalanche Energy2
L = 0.1 mH
IAS
EAS
-32
51
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
42
17
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2VDD = -15V , Starting TJ = 25 °C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
62.5
UNITS
°C / W
Ver 1.1
1 2013-3-21





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