(PDF) P45N02LI Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P45N02LI
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P45N02LI N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ @VGS = 10V ID 26A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC = 25 °C TC = 100 °C ID IDM IAS 26 16 70 13 Avalanche Energy L = 0.1 mH EAS 9 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 22 8.9 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty Cycle  1％. SYMBOL RqJC RqJA TYPICAL MAXIMUM 5.6 70 UNITS °C / W REV 1.0 1 2014/7/30 1 page P45N02LI N-Channel Logic Level Enhancement Mode MOSFET REV 1.0 5 2014/7/30 5 Page

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PDF P45N02LI Data sheet ( Hoja de datos )