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Número de pieza | PK6H2BA | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | UNIKC | |
Logotipo | ||
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N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 1.7mΩ @VGS = 10V
ID
160A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage
VGS ±20 V
Continuous Drain Current4
Pulsed Drain Current1
Continuous Drain Current
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA= 70 °C
ID
IDM
ID
160
101
350
A
39
31
Avalanche Current
IAS 82
Avalanche Energy
L =0.1mH
EAS
336 mJ
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
83
W
33
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
5
W
3.2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t ≦10s
Steady-State
RqJA
RqJA
25
40
Junction-to-Case
Steady-State
RqJC
1.5
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t ≦10s value
4Package limitation current is 51A.
UNITS
°C / W
REV 1.2
1 2016/6/23
1 page PK6H2BA
N-Channel Enhancement Mode MOSFET
REV 1.2
5 2016/6/23
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet PK6H2BA.PDF ] |
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PK6H2BA | N-Channel Enhancement Mode MOSFET | UNIKC |
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