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Teilenummer | PK6A6BA |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten PK6A6BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 8mΩ @VGS = 10V
ID
42A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Tc = 25 °C
Tc = 100 °C
ID
IDM
42
26.6
100
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
11
9
Avalanche Current
IAS 33.7
Avalanche Energy
L =0.1mH
EAS
56.8
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12.5
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.3
1.5
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
54
Junction-to-Case
RqJC
4
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0 1 2015/1/6
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ PK6A6BA Schematic.PDF ] |
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