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Teilenummer | PK6A4BA |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 8 Seiten PK6A4BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 10.5mΩ @VGS = 10V
ID
14A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
37
30
100
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
14
11
Avalanche Current
IAS 21
Avalanche Energy
L =0.1mH
EAS
22
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
20
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
4
2.7
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t ≦10s
Steady-State
RqJA
RqJA
30
57
Junction-to-Case
Steady-State
RqJC
4
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t ≦10s value.
UNITS
°C / W
REV 1.0
1 2017/1/10
PK6A4BA
N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:3000pcs/Reel
REV 1.0
6 2017/1/10
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ PK6A4BA Schematic.PDF ] |
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