(PDF) PK648BA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PK648BA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PK648BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.4mΩ @VGS = 10V ID 75A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 75 47 150 Continuous Drain Current TA = 25 °C TA= 70 °C ID 19.8 15.8 Avalanche Current IAS 37 Avalanche Energy L =0.1mH EAS 71 Power Dissipation TC = 25 °C TC = 100 °C PD 35 14 Power Dissipation TA = 25 °C TA = 70 °C PD 2.4 1.5 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 52 Junction-to-Case RqJC 3.6 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 26A. UNITS °C / W REV 1.0 1 2016/11/4 1 page PK648BA N-Channel Enhancement Mode MOSFET REV 1.0 5 2016/11/4 5 Page

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PDF PK648BA Data sheet ( Hoja de datos )