(PDF) PK600BA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PK600BA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PK600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.5mΩ @VGS = 10V ID 40A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 40 25 100 Continuous Drain Current TA = 25 °C TA= 70 °C ID 10.7 8.6 Avalanche Current IAS 18 Avalanche Energy L =0.1mH EAS 16.2 Power Dissipation TC = 25 °C TC = 100 °C PD 27.8 11 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 63 Junction-to-Case RqJC 4.5 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 20A. UNITS °C / W REV 1.1 1 2015/7/2 1 page PK600BA N-Channel Enhancement Mode MOSFET REV 1.1 5 2015/7/2 5 Page

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PDF PK600BA Data sheet ( Hoja de datos )