(PDF) PK510BA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PK510BA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PK510BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.3mΩ @VGS = 10V ID2 86A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C 86 ID 54 IDM 150 Continuous Drain Current TA = 25 °C TA = 70 °C 21 ID 16 Avalanche Current IAS 47 Avalanche Energy L = 0.1mH EAS 110 Power Dissipation TC = 25 °C TC = 100 °C 41 PD 16 Power Dissipation TA = 25 °C TA = 70 °C 2.5 PD 1.6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RqJC 3 Junction-to-Ambient3 RqJA 50 1Pulse width limited by maximum junction temperature. 2Package limitation current is 50A 3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air environment with TA=25°C UNITS °C / W Ver 1.0 1 2012/11/1 1 page PK510BA N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/11/1 5 Page

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PDF PK510BA Data sheet ( Hoja de datos )