|
|
PDF B20NM50FD Data sheet ( Hoja de datos )
| Número de pieza | B20NM50FD | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de B20NM50FD (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
|
No Preview Available !
STB20NM50FD
STF20NM50FD - STP20NM50FD
N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220
FDmesh™ Power MOSFET (with fast diode)
Features
Type
VDSS
RDS(on)
max
RDS(on)*
Qg
ID
STB20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC
STF20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC
STP20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC
20 A
20 A
20 A
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Tight process control and high manufacturing
yields
Application
■ Switching applications
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
3
2
1
TO-220FP
3
1
D²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB20NM50FD
STF20NM50FD
STP20NM50FD
B20NM50FD
F20NM50FD
P20NM50FD
Package
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
April 2008
Rev 9
1/16/
www.st.com
16
1 page  
STB20NM50FD - STF20NM50FD - STP20NM50FD
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD = 250 V, ID = 10 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
VDD = 400 V, ID = 20 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
Min Typ Max Unit
22 ns
20 ns
6 ns
15 ns
30 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM (1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 20 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =20 A, di/dt =100 A/µs,
VDD = 60 V, TJ=150 °C
(see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
20
80
1.5
245
2
16
A
A
V
ns
nC
A
5/16
5 Page 
STB20NM50FD - STF20NM50FD - STP20NM50FD
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.48
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85
0.147
0.151
Q 2.65
2.95
0.104
0.116
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet B20NM50FD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| B20NM50FD | N-CHANNEL POWER MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |