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Teilenummer | P8008HVA |
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Beschreibung | Dual N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten P8008HVA
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 68mΩ @VGS = 10V
ID
3.2A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
3.2
2.5
18
Avalanche Current
IAS 15.8
Avalanche Energy
L =0.1mH
EAS
12.5
Power Dissipation
TA = 25 °C
TA= 70°C
PD
1.5
1
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Lead
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJL
RqJA
TYPICAL
MAXIMUM
25
80
UNITS
°C / W
REV 1.0 1 2014/9/4
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ P8008HVA Schematic.PDF ] |
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