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Teilenummer | P8008HV |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 6 Seiten P8008HV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 80mΩ @VGS = 10V
ID
4A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
4
3
20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.9
1.2
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Lead
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJL
TYPICAL
MAXIMUM
65
25
UNITS
°C / W
Ver 1.0
1 2012/4/16
P8008HV
N-Channel Enhancement Mode MOSFET
Ver 1.0
6 2012/4/16
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ P8008HV Schematic.PDF ] |
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