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Teilenummer | P8008BV |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten P8008BV
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 80mΩ @VGS = 10V
ID
3A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Drain Current1
TA = 25 °C
TA = 100 °C
ID
3
2
Pulsed Drain Current
IDM 15
Avalanche Current
IAS 22
Avalanche Energy
L = 0.1mH
EAS
26
Power Dissipation
TA= 25 °C
TA =100 °C
PD
2.5
1
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
50
25
UNITS
°C / W
REV 1.0
1 2014/12/2
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ P8008BV Schematic.PDF ] |
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