(PDF) PZ2003EV Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	PZ2003EV
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PZ2003EV P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -8A SOP- 8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -8 -6.5 -50 Avalanche Current IAS -30 Avalanche Energy L = 0.1mH EAS 46 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 60 °C / W REV 1.1 1 2014/7/21 1 page PZ2003EV P-Channel Logic Level Enhancement Mode MOSFET REV 1.1 5 2014/7/21 5 Page

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PDF PZ2003EV Data sheet ( Hoja de datos )