(PDF) P5806NVG Datasheet - N&P-Channel Enhancement Mode MOSFET

Número de pieza	P5806NVG
Descripción	N&P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P5806NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 60V RDS(ON) 65mΩ @VGS = 10V -60V 120mΩ @VGS = -10V ID 4.5A -3.5A Channel N P SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 60 VDS P -60 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70 °C N 4.5 P -3.5 ID N 3.5 P -2.7 Pulsed Drain Current1 N 20 IDM P -20 Avalanche Current N 18.3 IAS P -18.3 Avalanche Energy L=0.1mH N 16.9 EAS P 16.9 Power Dissipation TA = 25 °C TA = 70 °C N2 P2 PD N 1.3 P 1.3 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 60 °C / W Ver 1.0 1 2012/12/5 1 page

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PDF P5806NVG Data sheet ( Hoja de datos )