P6002OAG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 60mΩ @VGS = 4.5V
-20V
115mΩ @VGS = -4.5V
ID
3.4A
-2.5A
Channel
N
P
TSOP-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
VDS
N 20
P -20
Gate-Source Voltage
N ±8
VGS P ±8
Continuous Drain Current
TA = 25 °C
TA = 70 °C
N 3.4
P -2.5
ID N 2.7
P -2
Pulsed Drain Current1
N 15
IDM P -15
Avalanche Current1
N 5.5
IAS P -12
Avalanche Energy
L = 0.1mH
N 1.5
EAS P 7.4
Power Dissipation
TA = 25 °C
TA = 70 °C
N 1.14
P 1.14
PD N 0.72
P 0.72
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.2 1 2016/4/8








P6002OAG
N&P-Channel Enhancement Mode MOSFET
REV 1.2 6 2016/4/8

6 Page