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Teilenummer | P5103EAG |
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Beschreibung | P-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten P5103EAG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
51mΩ @VGS = -10V
ID
-5A
TSOP- 06
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
Drain-Gate Voltage (RGS=20KΩ)
VGS ±20
VDG -30
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-5
-4.2
-20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.0
1.4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
t≦5sec
Junction-to-Ambient
Steady State
Junction-to-Lead
Steady State
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJA
RqJL
TYPICAL
MAXIMUM
62.5
110
50
UNITS
°C / W
Ver 1.0
1 2012/9/26
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ P5103EAG Schematic.PDF ] |
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