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Teilenummer | PZC502FYB |
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Beschreibung | P-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten PZC502FYB
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
550mΩ @VGS = -4.5V
ID
-0.7A
SOT-523
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-0.7
-0.6
-3
Power Dissipation
TA = 25 °C
TA= 70 °C
PD
0.4
0.3
ESD Class
HBM
2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
W
KV
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient2
RqJA
280
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measureed with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design.
°C / W
Ver 1.0
1 2013-8-30
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ PZC502FYB Schematic.PDF ] |
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