(PDF) P5102FM6 Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P5102FM6
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P5102FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 51mΩ @VGS = -4.5V ID -4.2A SOT-23-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -4.2 -3.3 -21 Avalanche Current IAS -21 Avalanche Energy L=0.1mH EAS 22 Power Dissipation TA = 25 °C TA = 70 °C PD 1.4 0.9 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 85 °C / W Ver 1.0 1 2012/6/25 1 page P5102FM6 P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/6/25 5 Page

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PDF P5102FM6 Data sheet ( Hoja de datos )