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Teilenummer | P5103EMG |
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Beschreibung | P-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
Logo | ||
Gesamt 8 Seiten P5103EMG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
51mΩ @VGS = -10V
ID
-3.8A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-3.8
-3
-20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1
0.7
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
Steady State
RqJA
117
Junction-to-Lead
Steady State
RqJC
60
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
Rev 1.1
1 2015/7/8
P5103EMG
P-Channel Logic Level Enhancement Mode MOSFET
A. Marking Information ( 此产品代码为:25 )
B. Tape&Reel Information:3000pcs/Reel
FEED DIRECTION
2.0 ∮0.05
1.55 ∮0.05
3.50 ∮0.05
4.00∮0.1
1.0 ∮0.25
9.0∮0.3
13.5 MAX
8.00∮0.3
8 MAX
1.4max
Rev 1.1
180 ∮1
ψ
6
ψ60 1
11.4∮1
2015/7/8
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ P5103EMG Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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