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PZ2N7002M Schematic ( PDF Datasheet ) - NIKO-SEM

Teilenummer PZ2N7002M
Beschreibung N-Channel Field Effect Transistor
Hersteller NIKO-SEM
Logo NIKO-SEM Logo 




Gesamt 5 Seiten
PZ2N7002M Datasheet, Funktion
NIKO-SEM
N-Channel Logic Level Enhancement
PZ2N7002M
Mode Field Effect Transistor
SOT-23(S)
Halogen-Free & Lead-Free
Drain
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 2Ω
ID
300mA
Gate
ESD PROTECTION DIODE
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 ° C
TC = 100 ° C
Power Dissipation
TC = 25 ° C
TC = 100 ° C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
60
±20
300
190
1
0.35
0.14
-40 to 150
UNITS
V
V
mA
A
W
°C
MAXIMUM
350
UNITS
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
MIN
LIMITS
TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
Drain-Source On-State Resistance1 RDS(ON)
Forward Transconductance1
gfs
VGS = 0V, ID = 100A
VDS = VGS, ID = 100A
VDS = 0V, VGS = ±16V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 ° C
VDS = 10V, VGS = 10V
VGS = 3.5V, ID = 10mA
VGS = 4.5V, ID = 100mA
VGS = 10V, ID = 200mA
VDS = 20V, ID = 200mA
60
1.0 1.8 2.5
±30
1
10
1
2.1 5
1.7 3
1.6 2
0.18
V
A
A
A
Ω
S
REV 0.93
1
C-40-4





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