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Teilenummer | P0925AD |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 8 Seiten P0925AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
0.48Ω @VGS = 10V
ID
9A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
9
5.4
36
9
Avalanche Energy
L =1.8mH
EAS
72
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
73
29
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.7 °C / W
REV 1.2
1 2015/12/29
P0925AD
N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:2500pcs/Reel
REV 1.2
6 2015/12/29
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ P0925AD Schematic.PDF ] |
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