(PDF) P6010DTG Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P6010DTG
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P6010DTG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -100V 60mΩ @VGS = -10V ID -27A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -27 -17 -100 Avalanche Current IAS -54 Avalanche Energy L = 0.1mH EAS 143 Power Dissipation TC = 25 °C TC = 100 °C PD 83 33 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤1% SYMBOL RqJC RqJA TYPICAL MAXIMUM UNITS 1.5 °C / W 62.5 Ver 1.0 1 2012/7/25 1 page P6010DTG P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/7/25 5 Page

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PDF P6010DTG Data sheet ( Hoja de datos )