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Teilenummer | P1615ATA |
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Beschreibung | N-Channel Field Effect Transistor | |
Hersteller | NIKO-SEM | |
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Gesamt 4 Seiten NIKO-SEM
N-Channel Enhancement Mode
P1615ATA
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
16.5mΩ
ID
68A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 1mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
150
±25
68
43
270
30
435
192
77
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
0.65
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
150
2.5 3.5 4.5
V
VDS = 0V, VGS = ±25V
±100 nA
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125 °C
1
A
10
REV1.0
G-32-2
1
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ P1615ATA Schematic.PDF ] |
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