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PDF P057AAT Data sheet ( Hoja de datos )
| Número de pieza | P057AAT | |
| Descripción | N-Channel Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode
P057AAT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75 5.8mΩ
ID
129A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.3mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Limited by package.
2Pulse width limited by maximum junction temperature.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
129
82
410
60
557
192
77
-55 to 150
275
UNITS
V
A
mJ
W
°C
MAXIMUM
0.65
63
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
75
2 2.5
4
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C
1
A
10
VDS = 10V, VGS = 10V
129
A
REV 1.1
Jul-29-2009
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P057AAT.PDF ] | |
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