Datenblatt-pdf.com


BUZ102S Schematic ( PDF Datasheet ) - Infineon

Teilenummer BUZ102S
Beschreibung Power Transistor
Hersteller Infineon
Logo Infineon Logo 




Gesamt 8 Seiten
BUZ102S Datasheet, Funktion
BUZ 102S
SIPMOSPower Transistor
Features
N channel
Enhancement mode
Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
dv/dt rated
175 ˚C operating temperature
VDS
RDS(on)
ID
55
0.018
52
V
A
Type
BUZ102S
BUZ102S E3045A
BUZ102S E3045
Package Ordering Code
P-TO220-3-1 Q67040-S4011-A2
P-TO263-3-2 Q67040-S4011-A6
P-TO263-3-2 Q67040-S4011-A5
Packaging
Tube
Tape and Reel
Tube
Pin 1 Pin 2 Pin 3
GDS
Maximum Ratings, at Tj = 25 ˚C unless unless specified
Parameter
Symbol
Continuous drain current
TC = 25 ˚C
TC = 100 ˚C
ID
Pulsed drain current
TC = 25 ˚C
Avalanche energy, single pulse
ID = 52 A, VDD = 25 V, RGS = 25
IDpulse
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = 52 A, VDS = 40 V, di/dt = 200 A/µs,
Tjmax = 175 ˚C
Gate source voltage
Power dissipation
TC = 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
52
37
208
245
12
6
Unit
A
mJ
kV/µs
±20
120
-55... +175
55/175/56
V
W
˚C
Data Book
1
05.99






BUZ102S Datasheet, Funktion
BUZ 102S
Typ. output characteristics
ID = f (VDS)
parameter: tp = 80 µs
BUZ102S
130 Ptot = 120W
A
l
110 k j
100
90
80
i
VGS [V]
a
hb
4.0
4.5
c 5.0
gd
5.5
e 6.0
70 f f
g
60 h
50 e i
j
40 d k
l
30
c
20
b
10
a
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
6.5
7.0
7.5
8.0
9.0
10.0
20.0
V 5.0
VDS
Typ. transfer characteristics ID= f (VGS)
parameter: tp = 80 µs
VDS 2 x ID x RDS(on) max
80
A
Typ. drain-source-on-resistance
RDS(on) = f (ID)
parameter: VGS
BUZ102S
0.060
b cde f g h
0.050
0.045
0.040
0.035
0.030
0.025
i
0.020
0.015
j
k
l
0.010
VGS [V] =
0.005
bc def
4.5 5.0 5.5 6.0 6.5
ghi j kl
7.0 7.5 8.0 9.0 10.0 20.0
0.000
0 20 40 60 80 A 120
ID
Typ. forward transconductance
gfs = f(ID); Tj = 25˚C
parameter: gfs
35
S
25
20
40
15
10
20
5
0
2
3
4
5
V
7
VGS
Data Book
6
0
0
10 20 30 40 50 A
70
ID
05.99

6 Page







SeitenGesamt 8 Seiten
PDF Download[ BUZ102S Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
BUZ102SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ102ALSIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ102SPower TransistorInfineon
Infineon
BUZ102SSIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)Siemens Semiconductor Group
Siemens Semiconductor Group
BUZ102SLSIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)Siemens Semiconductor Group
Siemens Semiconductor Group

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche