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KTD1146 Schematic ( PDF Datasheet ) - KEC
| Teilenummer | KTD1146 |
|
| Beschreibung | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Hersteller | KEC | |
| Logo |  |
|
Gesamt 3 Seiten 
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION
CAMERA STROBO (For Electronic Flash Unit)
FEATURES
ᴌLow VCE(SAT).
ᴌHigh Performance at Low Supply Voltage.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector
Current
DC
Pulse (Note1)
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature Range
Tstg
Note 1: Pulse Width⏊100mS, Duty Cycle⏊30%
RATING
40
20
7
5
8
625
150
-55ᴕ150
UNIT
V
V
V
A
mW
ᴱ
ᴱ
KTD1146
EPITAXIAL PLANAR NPN TRANSISTOR
BC
K
E
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1) (Note1)
hFE(2)
VCE(sat)
fT
Cob
IC=100ỌA, IE=0
IC=1mA, IB=0
IE=10ỌA, IC=0
VCB=20V, IE=0
VEB=7V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=2A
IC=3A, IB=60mA(Pulse)
VCE=6V, IC=50mA
VCB=20V, f=1MHz, IE=0
Note1) : hFE(1) Classification O:120ᴕ240, Y:200ᴕ400, GR:350ᴕ700
MIN.
40
20
7
-
-
120
100
-
20
-
TYP.
-
-
-
-
-
-
-
-
100
-
MAX.
-
-
-
100
100
700
-
0.4
-
50
UNIT
V
V
V
nA
nA
V
MHz
pF
1999. 11. 30
Revision No : 2
1/3
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Besondere Datenblatt
| Teilenummer | Beschreibung | Hersteller |
| KTD1145 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
| KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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| www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |