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Teilenummer | R6008FNJ |
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Beschreibung | MOSFET ( Transistor ) | |
Hersteller | ROHM Semiconductor | |
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Gesamt 6 Seiten Data Sheet
10V Drive Nch MOSFET
R6008FNJ
Structure
Silicon N-channel MOSFET
Features
1) Fast reverse recovery time (trr)
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage
VGSS garanteed to be ±30V .
5) Drive circuits can be simple.
6) Parallel use is easy.
Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
R6008FNJ
Taping
TL
1000
Inner circuit
∗1
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
Absolute maximum ratings (Ta 25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Power dissipation (Tc=25℃)
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD
Tch
Tstg
*1 Pw10s, Duty cycle1%
*2 L≒500H, VDD=50V, Rg=25, starting Tch=25℃
*3 Limited only by maximum temperature allowed.
Limits
600
30
8
32
8
32
4
4.3
50
150
55 to 150
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
2.5
Unit
C / W
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© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.10 - Rev.A
Notes
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ R6008FNJ Schematic.PDF ] |
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