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PDF SMK0160IS Data sheet ( Hoja de datos )
| Número de pieza | SMK0160IS | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | KODENSHI KOREA | |
| Logotipo |  |
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SMK0160IS
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
• Drain-Source breakdown voltage: BVDSS=600V (Min.)
• Low gate charge: Qg=3.9nC (Typ.)
• Low drain-source On resistance: RDS(on)=11.5Ω (Max.)
• 100% avalanche tested
• RoHS compliant device
Ordering Information
Part Number
SMK0160IS
Marking
SMK0160
Package
I-PAK
(Short Lead)
GDS
I-PAK
Marking Information
SMK
0160
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25°C
Tc=100°C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rev. date: 22-MAR-12
KSD-T6Q014-000
Rating
600
±30
1
0.77
4
49
1
2.5
28
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
°C
°C
www.auk.co.kr
1 of 8
1 page  
Fig. 11 Gate Charge Test Circuit & Waveform
SMK0160IS
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
Rev. date: 22-MAR-12
KSD-T6Q014-000
www.auk.co.kr
5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMK0160IS.PDF ] | |
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