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Número de pieza | SNN4010D | |
Descripción | N-Ch Trench MOSFET | |
Fabricantes | KODENSHI KOREA | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SNN4010D (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! SNN4010D
N-Ch Trench MOSFET
Power Switching Application
Features
Drain-source breakdown voltage: BVDSS=100V
Low gate charge device
Low drain-source On resistance: RDS(on)=25mΩ (Typ.)
Advanced trench process technology
High avalanche energy, 100% test
Ordering Information
Part Number
Marking
Package
SNN4010D
SNN4010
TO-252
D
G
S
TO-252
Marking Information
SNN
4010
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
VDSS
VGSS
Drain current (DC) *
Drain current (Pulsed) *
Single pulsed avalanche energy (Note 1)
Single avalanche current
Power dissipation
Operating junction temperature
Storage temperature range
Tc=25C
ID
Tc=100C
IDM
EAS
IAS
PD
TJ
Tstg
* Limited only maximum junction temperature
Rev. date: 14-MAR-13
KSD-T6O041-001
Rating
100
20
45
35
180
163
25.5
84
150
-55 to 150
Unit
V
V
A
A
A
mJ
A
W
C
C
www.auk.co.kr
1 of 7
1 page Test circuit
SNN4010D
Rev. date: 14-MAR-13
KSD-T6O041-001
www.auk.co.kr
5 of 7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SNN4010D.PDF ] |
Número de pieza | Descripción | Fabricantes |
SNN4010D | N-Ch Trench MOSFET | KODENSHI KOREA |
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