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Número de pieza | AO3413 | |
Descripción | 20V P-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO3413 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! AO3413
20V P-Channel MOSFET
General Description
The AO3413 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
Features
VDS = -20V
ID = -3A
RDS(ON) < 80mΩ
RDS(ON) < 100mΩ
RDS(ON) < 130mΩ
(VGS = -4.5V)
(VGS =- 4.5V)-15
(VGS = -2.5V)
(VGS = -1.8V)
SOT23
Top View
Bottom View
D
D
D
S
G
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-20
±8
-3
-2.4
-15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 9: July 2010
www.aosmd.com
Page 1 of 5
1 page AO3413
VDC
Vgs
Ig
Vds
Vgs
Rg
Vgs
Gate Charge Test Circuit & Waveform
Vgs
-10V
Qg
VDC
DUT
Vds
Qgs Qgd
Resistive Switching Test Circuit & Waveforms
RL
Vgs
ton
td(on) t r
toff
t d (o ff)
tf
DUT
Vdd
VDC
Vds
Charge
90%
10%
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vgs
+
Vdd
VDC
-
-Isd
-Vds
-I F trr
dI/dt
-I RM
Vdd
Rev 9: July 2010
www.aosmd.com
Page 5 of 5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AO3413.PDF ] |
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