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Teilenummer | STA3073F |
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Beschreibung | PNP Silicon Transistor | |
Hersteller | KODENSHI | |
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Gesamt 7 Seiten Applications
Power amplifier application
High current switching application
Features
High collector breakdown voltage
: VCEO=-120V
Low collector saturation voltage
: VCE(sat)=-0.5V(Max.)
Ordering Information
Type NO.
STA3073F
Marking
P73
Marking Diagram
P73
YWW
Column 1: Device Code
Column 2: Year & Week Code
STA3073F
PNP Silicon Transistor
PIN Connection
SOT-89
Package Code
SOT-89
Absolute Maximum Ratings
Characteristic
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
ICP*
Collector Power dissipation
PC
PC**
Junction temperature
TJ
Storage temperature range
* : Single pulse, tp= 300 ㎲
** : Device mounted on ceramic substrate (250mm2ⅹ0.8t)
Tstg
KSD-T5B032-000
Rating
-120
-120
-6
-1
-2
0.5
1
150
-55~150
(Ta=25℃)
Unit
V
V
V
A(DC)
A(Pulse)
W
C
C
1
Outline Dimension (Unit : mm)
STA3073F
※ Recommend PCB solder land (Unit: mm)
KSD-T5B032-000
6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ STA3073F Schematic.PDF ] |
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