Datenblatt-pdf.com

FGB5N60UNDF Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGB5N60UNDF
Beschreibung IGBT
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 10 Seiten
FGB5N60UNDF Datasheet, Funktion
FGB5N60UNDF
600 V, 5 A
Short Circuit Rated IGBT
Features
• Short Circuit Rated 10 us
• High Current Capability
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Sewing Machine, CNC, Home Appliances, Motor Control
September 2013
General Description
Using advanced NPT IGBT technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low-power inverter-
driven applications where low-losses and short-circuit rugged-
ness features are essential, such as sewing machine, CNC,
motor control and home appliances.
C
GC E
COLLECTOR
(FLANGE)
TO-263AB/D2-PAK
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Notes:
2: Mounted on 1” square PCB (FR4 or G-10 material)
G
E
Ratings
600
± 20
10
5
15
5
2.5
73.5
29.4
-55 to +150
-55 to +150
300
Typ.
Max.
1.7
4.5
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
1
www.fairchildsemi.com






FGB5N60UNDF Datasheet, Funktion
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
10
td(on)
tr
1
Common Emitter
VGE = 15V, RG =10Ω
TC = 25oC
TC = 125oC
0.1
2
4
6
8
Collector Current, IC [A]
10
Figure 15. Switching Loss vs.
Gate Resistance
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 5A
TC = 25oC
TC = 125oC
Eon
100
Eoff
50
0 10 20 30 40
Gate Resistance, RG [Ω]
Figure 17. Turn off Switching
SOA Characteristics
20
50
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100
1000
Collector-Emitter Voltage, VCE [V]
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
tf
100
10
1
2
td(off)
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
468
Collector Current, IC [A]
10
Figure 16. Switching Loss vs
Collector Current
1000
Eon
100
Eoff Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
10
2 4 6 8 10
Collector Current, IC [A]
Figure 18. Forward Characteristics
30
10
TC = 125oC
TC = 75oC
TC = 25oC
1
01234
Forward Voltage, VF [V]
5
©2011 Fairchild Semiconductor Corporation
FGB5N60UNDF Rev. C1
6
www.fairchildsemi.com

6 Page







SeitenGesamt 10 Seiten
PDF Download[ FGB5N60UNDF Schematic.PDF ]


Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
FGB5N60UNDFIGBTFairchild Semiconductor
Fairchild Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com    |   2020   |  Kontakt  |   Suche