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FGA50N100BNTD2 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGA50N100BNTD2
Beschreibung IGBT
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 10 Seiten
FGA50N100BNTD2 Datasheet, Funktion
FGA50N100BNTD2
1000 V NPT Trench IGBT
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
• RoHS Compliant
Applications
• UPS, Welder
November 2013
General Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum perfor-
mance for hard switching application such as UPS, welder
applications.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25oC
@ TC = 100oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
1
G
E
Ratings
1000
± 25
50
35
200
30
15
150
156
63
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
-
Max.
0.8
1.2
40.0
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com






FGA50N100BNTD2 Datasheet, Funktion
Typical Performance Characteristics
Figure19. Turn offSwitchingSOACharacterisics
250
100
Figure20.Forward Characteristics
200
100
TJ = 125oC
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000 3000
Collector-Emitter Voltage, VCE [V]
10
TJ = 25oC
1
0.1
0
TC = 25oC
TC = 125oC
12345
Forward Voltage, VF [V]
6
Figure 21. Reverse Current
300
100
TJ = 125oC
10
1
0.1
0.01
TJ = 25oC
1E-3
50
200 400 600 800
Reverse Voltage, VR [V]
1000
Figure 23. Reverse Recovery Characteristics vs.
Forward Current
80 6
Figure 22. Reverse Recovery Characteristics vs.
diF/dt
80 10
Trr
8
60
Irr
6
40
4
20
2
IF = 60A
TC = 25oC
00
20 40 60 80 100 120 140 160 180 200
diF/dt[A/s]
Trr
Irr
70 4
60
10
diF/dt = 100A/s
TC = 25oC
2
20 30 40 50 60
Forward Current,IF[A]
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
6
www.fairchildsemi.com

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