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FGB3236_F085 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGB3236_F085
Beschreibung N-Channel Ignition IGBT
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 10 Seiten
FGB3236_F085 Datasheet, Funktion
October 2013
FGB3236_F085 / FGI3236_F085
EcoSPARKŠ 320mJ, 360V, N-Channel Ignition IGBT
Features
„ Industry Standard D2-Pak package
„ SCIS Energy = 320mJ at TJ = 25oC
„ Logic Level Gate Drive
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Automotive lgnition Coil Driver Circuits
„ Coil On Plug Applications
Package
GATE
EMITTER
COLLECTOR
JEDEC TO-263AB
D2-Pak
E
G
COLLECTOR TO262AB
(FLANGE)
FDI SERIES
@2008 Fairchild Semiconductor Corporation
FGB3236_F085 / FGI3236_F085 Rev. A1
1
www.fairchildsemi.com






FGB3236_F085 Datasheet, Funktion
Typical Performance Curves (Continued)
2000
1600
1200
CIES
f = 1MHz
VGE = 0V
10
ICE = 10A, TJ = 25oC
8
VCE = 6V
6 VCE = 12V
800
400
CRES
COES
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs. Collector to Emitter
Voltage
4
2
0 0 10 20 30 40
Qg, GATE CHARGE(nC)
Figure 14. Gate Charge
50
380
ICER = 10mA
370
TJ = -40oC
TJ = 25oC
360
TJ = 175oC
350
10
100 1000
RG, SERIES GATE RESISTANCE ()
Figure 15. Break Down Voltage vs. Series Gate Resistance
6000
2
1 DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
PDM
0.01
SINGLE PULSE
1E-3
10-5
10-4
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
t, RECTANGULAR PULSE DURATION(s)
10-1
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
1
FGB3236_F085 / FGI3236_F085 Rev. A1
6
www.fairchildsemi.com

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