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FGB3040G2_F085 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGB3040G2_F085
Beschreibung N-Channel Ignition IGBT
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 10 Seiten
FGB3040G2_F085 Datasheet, Funktion
May 2014
FGB3040G2_F085 / FGD3040G2_F085
FGP3040G2_F085 / FGI3040G2_F085
EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT
Features
„ SCIS Energy = 300mJ at TJ = 25oC
„ Logic Level Gate Drive
Applications
„ Automotive lgnition Coil Driver Circuits
„ Coil On Plug Applications
„ Qualified to AEC Q101
„ RoHS Compliant
Package
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
E CG
Symbol
G
E
JEDEC TO-252AA
D-Pak
JEDEC TO-262AA
EC
G
GATE
G
E
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 Self Clamping Inductive Switching Energy (Note 1)
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)
IC25 Collector Current Continuous, at VGE = 5.0V, TC = 25°C
IC110 Collector Current Continuous, at VGE = 5.0V, TC = 110°C
VGEM Gate to Emitter Voltage Continuous
PD
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
TPKG Reflow soldering according to JESD020C
ESD
HBM-Electrostatic Discharge Voltage at100pF, 1500Ω
CDM-Electrostatic Discharge Voltage at 1Ω
@2014 Fairchild Semiconductor Corporation
FGx3040G2_F085 Rev.C4
1
COLLECTOR
R1
R2
EMITTER
Ratings
400
28
300
170
41
25.6
±10
150
1
-55 to +175
-55 to +175
300
260
4
2
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
kV
www.fairchildsemi.com






FGB3040G2_F085 Datasheet, Funktion
Typical Performance Curves (Continued)
12
ICE = 6.5A, VGE = 5V, RG = 1KΩ
10
Resistive tOFF
8
Inductive tOFF
6
4
2 Resistive tON
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. Switching Time vs. Junction
Temperature
430
2000
1600
1200
CIES
f = 1MHz
VGE = 0V
800
400
CRES
COES
0
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. Capacitance vs. Collector to Emitter
Voltage
420 ICER = 10mA
410
400
390
TJ = 25oC
TJ = 175oC
TJ = -40oC
380
10
100
RG, SERIES GATE RESISTANCE (Ω)
1000
Figure 15. Break down Voltage vs. Series Gate Resistance
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.5
0.20
0.10
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION(s)
1
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
6000
10
@2014 Fairchild Semiconductor Corporation
FGx3040G2_F085 Rev.C4
6
www.fairchildsemi.com

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