Datenblatt-pdf.com

FGB3245G2_F085 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGB3245G2_F085
Beschreibung N-Channel Ignition IGBT
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 9 Seiten
FGB3245G2_F085 Datasheet, Funktion
FGD3245G2_F085 / FGB3245G2_F085
EcoSPARK®2 320mJ, 450V, N-Channel Ignition IGBT
May 2014
Features
„ SCIS Energy = 320mJ at TJ = 25oC
„ Logic Level Gate Drive
„ Low Saturation Voltage
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Automotive lgnition Coil Driver Circuits
„ Coil On Plug Applications
General Description
The FGB3245G2_F085 and FGD3245G2 are N-channel
IGBTs designed in Fairchild's EcoSPARK-2 technology
which helps in eliminating external protection circuitry. The
technology is optimized for driving the coil in the harsh
environment of automotive ignition systems and offers out-
standing Vsat and SCIS Energy capability also at elevated
operating temperatures. The logic level gate input is ESD
protected and features an integrated gate resistor. An inte-
grated zener-circuitry clamps the IGBT's collecter- to-emit-
ter voltage at 450V which enables systems requiring a
higher spark voltage
Package
Symbol
JEDEC TO-263AB
D²-Pak
G
COLLECTOR
E (FLANGE)
JEDEC TO-252AA
D-Pak
COLLECTOR
G (FLANGE)
E
GATE
COLLECTOR
R1
R2
EMITTER
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
1
www.fairchildsemi.com






FGB3245G2_F085 Datasheet, Funktion
Typical Performance Curves (Continued)
2000
1600
1200
CIES
f = 1MHz
800
400
CRES
COES
0
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs. Collector to Emitter
Voltage
10
ICE = 10A, IG=1mA, TJ = 25oC
8
VCE = 6V
6
VCE = 12V
4
2
0
0 10 20 30 40 50 60
Qg, GATE CHARGE(nC)
Figure 14. Gate Charge
480
ICER = 10mA
470
460
TJ = -40oC
450
TJ = 25oC
440
TJ = 175oC
430
420
10
100 1000
RG, SERIES GATE RESISTANCE (Ω)
Figure 15. Break down Voltage vs. Series Gate Resistance
6000
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.5
0.20
0.10
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
t, RECTANGULAR PULSE DURATION(s)
10-1
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
100
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
6
www.fairchildsemi.com

6 Page







SeitenGesamt 9 Seiten
PDF Download[ FGB3245G2_F085 Schematic.PDF ]


Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
FGB3245G2_F085N-Channel Ignition IGBTFairchild Semiconductor
Fairchild Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com    |   2020   |  Kontakt  |   Suche