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Teilenummer | FGD3325G2_F085 |
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Beschreibung | N-Channel Ignition IGBT | |
Hersteller | Fairchild Semiconductor | |
Logo | ||
Gesamt 11 Seiten FGD3325G2_F085
EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT
April 2015
Features
SCIS Energy = 330mJ at TJ = 25oC
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive lgnition Coil Driver Circuits
Coil On Plug Applications
Package
GATE
EMITTER
COLLECTOR
JEDEC TO-252
D-Pak
@2015 Fairchild Semiconductor Corporation
FGD3325G2_F085 Rev. 1.0
1
www.fairchildsemi.com
Typical Performance Curves (Continued)
2000
1600
1200
CIES
f = 1MHz
VGE = 0V
800
400
CRES
COES
0
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs. Collector to Emitter
Voltage
10
ICE = 10A, TJ = 25oC
8
VCE = 6V
6
VCE = 12V
4
2
0
0 5 10 15 20
Qg, GATE CHARGE(nC)
Figure 14. Gate Charge
25
260
ICER = 10mA
255
250
TJ = -40oC
245 TJ = 25oC
240 TJ = 175oC
235
230
20
100 1000
RG, SERIES GATE RESISTANCE (Ω)
Figure 15. Break down Voltage vs. Series Gate Resistance
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION(s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
6000
10-1
@2015 Fairchild Semiconductor Corporation
FGD3325G2_F085 Rev. 1.0
6
www.fairchildsemi.com
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ FGD3325G2_F085 Schematic.PDF ] |
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