SBW3320 Schematic ( Datenblatt PDF ) - WINSEMI SEMICONDUCTOR

		


SBW3320
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed
◆ High Voltage Capability
◆ Wide Reverse Bias SOA
TO3P
SBW3320
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
TSTG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25℃
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
TO247
SBW3320W
Value
500
400
7.0
15
30
5.0
10
80
150
-65 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
1.56
62.5
Units
℃/W
℃/W
Jal 2011 .Rev.2
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T02-1








TO3P(N) Package Dimension
Unit :mm
SBW3320
Steady, keep you advance
6 /7

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