(PDF) XP131A0526SR Datasheet

Número de pieza	XP131A0526SR
Descripción	Power MOS FET
Fabricantes	Torex Semiconductor
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No Preview Available ! NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.026Ω (max) NUltra High-Speed Switching NSOP-8 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP131A0526SR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance : Rds(on)=0.017Ω (Vgs=10V) : Rds(on)=0.026Ω (Vgs=4.5V) Ultra high-speed switching Operational Voltage : 4.5V High density mounting : SOP-8 PARAMETER SYMBOL Ta=25°C RATINGS UNITS Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Vdss Vgss Id Idp Idr 30 V ±20 V 10 A 30 A 10 A Continuous Channel Power Dissipation (note) Pd 2.5 W Channel Temperature Tch Storage Temperature Tstg Note: When implemented on a glass epoxy PCB 150 -55~150 °C °C 11 723 1 page

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PDF XP131A0526SR Data sheet ( Hoja de datos )