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PDF STF13N60DM2 Data sheet ( Hoja de datos )
| Número de pieza | STF13N60DM2 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
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STF13N60DM2
N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2
Power MOSFET in a TO-220FP package
Datasheet - production data
Features
Order code
STF13N60DM2
VDS
600 V
RDS(on) max.
0.365 Ω
ID
11 A
TO-220FP
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
S(3)
Order code
STF13N60DM2
AM01476v1_tab
Table 1: Device summary
Marking
13N60DM2
Package
TO-220FP
Packing
Tube
December 2016
DocID029201 Rev 2
This is information on a product in full production.
1/13
www.st.com
1 page  
STF13N60DM2
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD Source-drain current
- 11 A
ISDM(1)
Source-drain current
(pulsed)
- 44 A
VSD(2) Forward on voltage
VGS = 0 V, ISD = 11 A
- 1.6 V
trr
Reverse recovery time
ISD = 11 A, di/dt = 100 A/µs,
- 90
Qrr
Reverse recovery
charge
VDD = 60 V (see Figure 16: "Test
circuit for inductive load
-
252
IRRM
Reverse recovery
current
switching and diode recovery
times")
- 5.6
ns
nC
A
trr Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
ISD = 11 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
- 170
- 667
- 8.6
ns
nC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 μA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID029201 Rev 2
5/13
5 Page 
STF13N60DM2
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Package information
Table 10: TO-220FP package mechanical data
mm
Min.
Typ.
Max.
4.4 4.6
2.5 2.7
2.5 2.75
0.45 0.7
0.75 1
1.15 1.70
1.15 1.70
4.95 5.2
2.4 2.7
10 10.4
16
28.6
9.8
30.6
10.6
2.9 3.6
15.9 16.4
9 9.3
3 3.2
DocID029201 Rev 2
11/13
11 Page | ||
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