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NGTB40N60IHLWG Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer NGTB40N60IHLWG
Beschreibung IGBT
Hersteller ON Semiconductor
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Gesamt 10 Seiten
NGTB40N60IHLWG Datasheet, Funktion
NGTB40N60IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast copackaged free wheeling diode with a low
forward voltage.
Features
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
Soft, Fast Free Wheeling Diode
These are PbFree Devices
Typical Applications
Inductive Heating
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax
Gateemitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TJ
600
80
40
200
80
40
200
$20
250
50
55 to +150
V
A
A
A
A
V
W
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 A, 600 V
VCEsat = 2.0 V
Eoff = 0.4 mJ
C
G
E
G
C
E
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
40N60IHL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB40N60IHLWG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 0
1
Publication Order Number:
NGTB40N60IHLW/D






NGTB40N60IHLWG Datasheet, Funktion
NGTB40N60IHLWG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
20%
0.1 10%
5%
2%
0.01 1%
Single Pulse
0.001
0.000001
0.00001
RqJC = 0.87
Junction R1
Ci = ti/Ri
C1
R2
C2
Ri (°C/W) ti (sec)
Rn Case 0.04077 1.0E4
0.09054 5.48E5
0.16141 0.002
0.21558 0.03
0.24842
0.1
Cn
0.11759
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
0.1
1
10 100
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
1000
10
1 50% Duty Cycle
RqJC = 1.46
20%
10%
0.1 5%
2%
0.01 1%
Junction R1
Ci = ti/Ri
C1
R2
C2
Rn Case Ri (°C/W) ti (sec)
0.18019 1.48E4
0.37276 0.002
0.45472 0.03
0.33236
0.1
Cn
0.11759
2.0
0.001
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
1 10 100
1000
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance
http://onsemi.com
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