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Teilenummer | NGTB40N60IHLWG |
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Beschreibung | IGBT | |
Hersteller | ON Semiconductor | |
Logo | ||
Gesamt 10 Seiten NGTB40N60IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
Features
• Low Saturation Voltage using Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Low Gate Charge
• Soft, Fast Free Wheeling Diode
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TJ
600
80
40
200
80
40
200
$20
250
50
−55 to +150
V
A
A
A
A
V
W
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 A, 600 V
VCEsat = 2.0 V
Eoff = 0.4 mJ
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
40N60IHL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N60IHLWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 0
1
Publication Order Number:
NGTB40N60IHLW/D
NGTB40N60IHLWG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
20%
0.1 10%
5%
2%
0.01 1%
Single Pulse
0.001
0.000001
0.00001
RqJC = 0.87
Junction R1
Ci = ti/Ri
C1
R2
C2
Ri (°C/W) ti (sec)
Rn Case 0.04077 1.0E−4
0.09054 5.48E−5
0.16141 0.002
0.21558 0.03
0.24842
0.1
Cn
0.11759
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
0.1
1
10 100
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
1000
10
1 50% Duty Cycle
RqJC = 1.46
20%
10%
0.1 5%
2%
0.01 1%
Junction R1
Ci = ti/Ri
C1
R2
C2
Rn Case Ri (°C/W) ti (sec)
0.18019 1.48E−4
0.37276 0.002
0.45472 0.03
0.33236
0.1
Cn
0.11759
2.0
0.001
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
1 10 100
1000
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance
http://onsemi.com
6
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ NGTB40N60IHLWG Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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