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PDF NGTB40N60FL2WG Data sheet ( Hoja de datos )
| Número de pieza | NGTB40N60FL2WG | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
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NGTB40N60FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
Features
• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Symbol
VCES
IC
Value
600
80
40
Unit
V
A
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF A
80
40
Diode Pulsed Current
TPULSE Limited by TJ Max
Pulsed collector current, Tpulse
limited by TJmax
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
Gate−emitter voltage
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
IFM 160 A
ICM 160 A
tSC 5 ms
VGE
$20
V
$30
V
PD W
366
183
TJ −55 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8″
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
40 A, 600 V
VCEsat = 1.7 V
EOFF = 0.44 mJ
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
40N60FL2
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
NGTB40N60FL2WG TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 1
1
Publication Order Number:
NGTB40N60FL2W/D
1 page  
NGTB40N60FL2WG
TYPICAL CHARACTERISTICS
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
5
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 40 A
Eon
Eoff
15 25 35 45 55 65
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
75
1000
td(off)
td(on)
tf
tr
100
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 40 A
10
5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
2.5
VGE = 15 V
2.0
TJ = 150°C
IC = 40 A
Rg = 10 W
1.5
1.0
Eon
Eoff
0.5
0
150 200 250 300 350 400 450 500 550 600
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
1000
1000
td(off)
100 td(on)
tf
tr
VGE = 15 V
TJ = 150°C
IC = 40 A
Rg = 10 W
10
175 225 275 325 375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
100
dc operation
10
Single Nonrepetitive
1 Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
1 10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
50 ms
100 ms
1 ms
1000
100
10
VGE = 15 V, TC = 150°C
1
1 10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
www.onsemi.com
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