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PDF KTB989 Data sheet ( Hoja de datos )
| Número de pieza | KTB989 | |
| Descripción | TRIPLE DIFFUSED PNP TRANSISTOR | |
| Fabricantes | KEC | |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
ᴌGood Linearity of hFE.
ᴌComplementary to KTD1352.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Base Current
Collector Power Dissipation (Tc=25ᴱ)
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IE
IB
PC
Tj
Tstg
RATING
-80
-80
-5
-4
4
-0.4
30
150
-55ᴕ150
UNIT
V
V
V
A
A
A
W
ᴱ
ᴱ
KTB989
TRIPLE DIFFUSED PNP TRANSISTOR
A
R
S
D
T
L
CC
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
Φ3.60 +_ 0.20
3.00
6.70 MAX
13.60+_ 0.50
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
9.50+_ 0.20
8.00+_ 0.20
2.90 MAX
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
V(BR)EBO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
VCB=-80V, IE=0
VEB=-5V, IC=0
IC=-50mA, IB=0
IE=-10mA, IC=0
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-3A
IC=-3A, IB=-0.3A
VCE=-5V, IC=-3A
VCE=-5V, IC=-0.5A
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Note : hFE(1) Classification R:40ᴕ80 , O:70ᴕ140 , Y:120ᴕ240
MIN.
-
-
-80
-5.0
40
15
-
-
3
-
TYP.
-
-
-
-
-
-
-1.0
-1.0
-
130
MAX.
-30
-100
-
-
240
-
-1.7
-1.5
-
-
UNIT
ỌA
ỌA
V
V
V
V
MHz
pF
1994. 5. 20
Revision No : 0
1/2
1 page | ||
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| PDF Descargar | [ Datasheet KTB989.PDF ] | |
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