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PDF STL33N60DM2 Data sheet ( Hoja de datos )
| Número de pieza | STL33N60DM2 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL33N60DM2
N-channel 600 V, 0.115 Ω typ., 21 A MDmesh™ DM2
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
5
4
32
1
PowerFLAT™ 8x8 HV
Figure 1: Internal schematic diagram
Features
Order code
STL33N60DM2
VDS @
TJmax
650 V
RDS(on)max
0.140 Ω
ID
21 A
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Order code
STL33N60DM2
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packaging
33N60DM2
PowerFLAT™ 8x8 HV
Tape and reel
March 2016
DocID026781 Rev 2
This is information on a product in full production.
1/15
www.st.com
1 page  
STL33N60DM2
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6: Switching times
Test conditions
VDD = 300 V, ID = 10.5 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 14: "Switching
times test circuit for resistive
load")
Electrical characteristics
Min.
-
-
-
-
Typ.
17
8
62
9
Max. Unit
- ns
- ns
- ns
- ns
Symbol
ISD (1)
ISDM (1)(2)
VSD(3)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
Table 7: Source drain diode
Test conditions
ISD = 21 A, VGS = 0
ISD = 21 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 16: " Test
circuit for inductive load switching
and diode recovery times")
ISD = 21 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 16: " Test circuit for
inductive load switching and diode
recovery times")
Min. Typ. Max. Unit
- 21 A
- 84 A
- 1.6 V
- 120
ns
- 0.53
µC
- 8.8
- 316
- 2.85
A
ns
µC
- 18
A
Notes:
(1)The value is rated according to Rthj-case and limited by package.
(2)Pulse width limited by safe operating area
(3)Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Symbol
V(BR)GSO
Table 8: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
DocID026781 Rev 2
5/15
5 Page 
STL33N60DM2
Dim.
A
A1
A3
b
D
E
D2
E1
E2
e
L
Package mechanical data
Table 9: PowerFLAT™ 8x8 HV mechanical data
mm
Min.
Typ.
Max.
0.75 0.85
0.00
0.95
0.05
0.10 0.20
0.90 1.00
0.30
1.10
7.90 8.00
7.90 8.00
8.10
8.10
7.10 7.20
2.65 2.75
4.25 4.35
7.30
2.85
4.45
2.00
0.40 0.50
0.60
Figure 21: PowerFLAT™ 8x8 HV footprint
All dimensions are in millimeters.
DocID026781 Rev 2
11/15
11 Page | ||
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| PDF Descargar | [ Datasheet STL33N60DM2.PDF ] | |
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