(PDF) MS1453 Datasheet - RF & MICROWAVE TRANSISTORS

Número de pieza	MS1453
Descripción	RF & MICROWAVE TRANSISTORS
Fabricantes	Advanced Power Technology
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No Preview Available ! RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS Features • 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOLD METALIZATION • INTERNAL INPUT MATCHING • CLASS AB LINEAR OPERATION • POUT = 30 W MIN. WITH 7.5 dB GAIN MS1453 DESCRIPTION: The MS1453 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCES VEBO IC PDISS TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-case Value 50 45 5.0 5.0 43 +200 -65 to +150 3.0 Unit V V V A W °C °C °C/W MS1453.PDF 12-10-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 1 page

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PDF MS1453 Data sheet ( Hoja de datos )