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KGF65A3H Schematic ( PDF Datasheet ) - Sanken

Teilenummer KGF65A3H
Beschreibung Trench Field Stop IGBT
Hersteller Sanken
Logo Sanken Logo 




Gesamt 15 Seiten
KGF65A3H Datasheet, Funktion
VCE = 650 V, IC = 30 A
Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A3H, MGF65A3H, FGF65A3H
Data Sheet
Description
KGF65A3H, MGF65A3H, and FGF65A3H are 650 V
Field Stop IGBTs. Sanken original trench structure
decreases gate capacitance, and achieves high speed
switching and switching loss reduction. Thus, Field Stop
IGBTs can improve the efficiency of your circuit.
Features
Low Saturation Voltage
High Speed Switching
With Integrated Fast Recovery Diode
RoHS Compliant
VCE ------------------------------------------------------ 650 V
IC (TC = 100 °C) ----------------------------------------- 30 A
Short Circuit Withstand Time ----------------------- 10 μs
VCE(sat)-----------------------------------------------1.9 V typ.
tf (TJ = 175 °C) ------------------------------------ 60 ns typ.
VF----------------------------------------------------1.8 V typ.
Applications
Welding Converters
PFC Circuit
Package
TO247-3L
(1) (2) (3)
TO3PF-3L
(1) (2) (3)
(1)
TO3P-3L
(4)
(1) (2) (3)
(2)(4)
(1) Gate
(2) Collector
(3) Emitter
(4) Collector
(3)
(4)
Selection Guide
Part Number
KGF65A3H
MGF65A3H
FGF65A3H
Not to scale
Package
TO247-3L
TO3P-3L
TO3PF-3L
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
1






KGF65A3H Datasheet, Funktion
KGF65A3H, MGF65A3H, FGF65A3H
100
80
60
40
20
TO3PF-3L,
TJ < 175 °C
0
25 50 75
100 125 150 175
Case Temperature, TC (°C)
Figure 6. Power Dissipation vs. TO3PF-3L Case
Temperature
90
80 TJ = 25 °C
VGE = 15 V
70
VGE = 20 V
60
VGE = 12 V
50
40
VGE = 10 V
30
20
VGE = 8 V
10
0
01234
Collector-Emitter Voltage, VCE (V)
5
Figure 8. Output Characteristics (TJ = 25 °C)
40
30
20
10
TO3PF-3L,
TJ < 175 °C
0
25 50 75 100 125 150
Case Temperature, TC (°C)
175
Figure 7. Collector Current vs. TO3PF-3L Case
Temperature
90
80 TJ = 175 °C
70 VGE = 20 V
60 VGE = 15 V
VGE = 12 V
50
40
30 VGE = 10 V
20
10 VGE = 8 V
0
01234
Collector-Emitter Voltage, VCE (V)
5
Figure 9. Output Characteristics (TJ = 175 °C)
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
6

6 Page









KGF65A3H pdf, datenblatt
KGF65A3H, MGF65A3H, FGF65A3H
10
1
Diode
IGBT
0.1
0.01
0.001
TO3PF-3L,
TC = 25 °C,
Single pulse,
VCE < 5 V
10μ 100μ 1m 10m 100m
Pulse Width (s)
1
10
Figure 29. Transient Thermal Resistance (TO3PF-3L)
100
xGF65A3H-DSE Rev.1.3
SANKEN ELCTRIC CO., LTD.
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
12

12 Page





SeitenGesamt 15 Seiten
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