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PDF APTM100H45FT3G Data sheet ( Hoja de datos )
| Número de pieza | APTM100H45FT3G | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APTM100H45FT3G
Full - Bridge
MOSFET Power Module
VDSS = 1000V
RDSon = 450mΩ typ @ Tj = 25°C
ID = 18A @ Tc = 25°C
13 14
Q1
Q3
18
22 7
19
23 8
Q2
11
10
Q4
26 4
27 3
29 30
15
31
R1
32
16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
2 34
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
1000
18
14
72
±30
540
357
18
50
2500
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
1 page  
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
1000
100
Ciss
Coss
Crss
10
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM100H45FT3G
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID=9A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
100
100µs
limited by
RDSon
1ms
10
10ms
1 Single pulse
TJ=150°C
TC=25°C
0
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=18A
TJ=25°C
10
VDS=200V
VDS=500V
8 VDS=800V
6
4
2
0
0 40 80 120 160 200
Gate Charge (nC)
www.microsemi.com
5–6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTM100H45FT3G.PDF ] | |
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